发明名称 |
Polysilicon pattern for a floating gate memory |
摘要 |
An integrated circuit floating gate memory is formed using two layers of polysilicon. The first layer of polysilicon is patterned twice, once before the second polysilicon layer is deposited, and again as part of the etch of the second layer of polysilicon. Stringers of the second layer of polysilicon can form along the edge of the first etch of the first layer of polysilicon. The first etch of the first layer of polysilicon is patterned so that even if these stringers are subsequently formed, there is no harm.
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申请公布号 |
US4829351(A) |
申请公布日期 |
1989.05.09 |
申请号 |
US19870026357 |
申请日期 |
1987.03.16 |
申请人 |
MOTOROLA, INC. |
发明人 |
ENGLES, BRUCE E.;GEROSA, GIANFRANCO |
分类号 |
H01L21/336;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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