| 摘要 |
In a single crystal growing technique (crystal pulling) a method and apparatus for minimizing impurity contamination and preventing heat convection currents from affecting the solid-melt crystal growing interface which uses a floating baffle plate in the interior of the feed melt containing crucible in order to obtain a single crystal of a compound semiconductor having a high melting point and exhibiting a high dissociation pressure at the said melting point such as a compound semiconductor of Groups III-V, especially GaAs or Gap, the crystal having a small dislocation density. Improvement is made on the shape of the baffle plate and on baffle plate control means, and this baffle plate is combined with selected intra-furnace pressure or heating means or temperature measuring means.
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