发明名称 |
Annealing method for III-V deposition |
摘要 |
A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.
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申请公布号 |
US4835116(A) |
申请公布日期 |
1989.05.30 |
申请号 |
US19870120024 |
申请日期 |
1987.11.13 |
申请人 |
KOPIN CORPORATION |
发明人 |
LEE, JHANG W.;MCCULLOUGH, RICHARD E. |
分类号 |
H01L21/20;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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