发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film. |
申请公布号 |
US2016284936(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201615174525 |
申请日期 |
2016.06.06 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
SAMONJI Katsuya;YAMANAKA Kazuhiko;YOSHIDA Shinji;HAGINO Hiroyuki |
分类号 |
H01L33/12;H01L33/14;H01L33/32;H01S5/02;H01S5/024;H01S5/042;H01S5/022;H01S5/343;H01S5/323;H01L33/06;H01S5/20 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Osaka JP |