发明名称 |
TRANSISTOR AND DISPLAY DEVICE |
摘要 |
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided. |
申请公布号 |
US2016284865(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201615171292 |
申请日期 |
2016.06.02 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;SASAKI Toshinari;SAKATA Junichiro;TSUBUKU Masashi |
分类号 |
H01L29/786;H01L27/12;H01L29/24;H01L29/423 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |