Diode Structure Compatible with FinFET Process

摘要

An embodiment integrated circuit (e.g., diode) and method of making the same. The embodiment integrated circuit includes a well having a first doping type formed over a substrate having the first doping type, the well including a fin, a source formed over the well on a first side of the fin, the source having a second doping type, a drain formed over the well on a second side of the fin, the drain having the first doping type, and a gate oxide formed over the fin, the gate oxide laterally spaced apart from the source by a back off region of the fin. The integrated circuit is compatible with a FinFET fabrication process.

主权项

1. An integrated circuit comprising:
a fin formed between adjacent trenches; a first source/drain region in the fin, the first source/drain region having a first conductivity type; a second source/drain region in the fin, the second source/drain region having a second conductivity type, the first conductivity type being different than the second conductivity type; a channel region interposed between the first source/drain region and the second source/drain region, the channel region having the second conductivity type, the second source/drain region having a higher dopant concentration of the second conductivity type than the channel region; and a gate over the channel region, the gate having a first edge closest to the first source/drain region and a second edge closest to the second source/drain region, wherein the first edge is laterally offset from an interface between the channel region and the first source/drain region in a plan view, wherein the gate and the second source/drain region are electrically coupled.