| 发明名称 |
FORMING TUNNELING FIELD-EFFECT TRANSISTOR WITH STACKING FAULT AND RESULTING DEVICE |
| 摘要 |
Devices including stacking faults in sources, or sources and drains, of TFETs are disclosed to improve tunneling efficiency. Embodiments may include a tunneling field-effect transistor comprising a substrate; a source and a drain within the substrate; a gate between the source and the drain; and a stacking fault within the source. |
| 申请公布号 |
US2016284846(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201514667872 |
申请日期 |
2015.03.25 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
LIU Yanxiang;CHI Min-hwa |
| 分类号 |
H01L29/78;H01L29/08;H01L29/04;H01L27/092;H01L29/16 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a tunneling field-effect transistor comprising:
a substrate;a source and a drain within the substrate;a gate between the source and the drain; anda stacking fault within the source. |
| 地址 |
Grand Cayman KY |
