发明名称 Deposited film forming process and deposited film forming device
摘要 A process for forming a deposited film according to chemical vapor deposition on a substrate comprises the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.
申请公布号 US4849249(A) 申请公布日期 1989.07.18
申请号 US19880186770 申请日期 1988.04.25
申请人 CANON KABUSHIKI KAISHA 发明人 ISHIHARA, SHUNICHI;OSADA, YOSHIYUKI;ODA, SHUNRI;SHIMIZU, ISAMU
分类号 H01L31/04;C23C16/22;C23C16/452;H01L21/205 主分类号 H01L31/04
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