A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region.
申请公布号
US4849799(A)
申请公布日期
1989.07.18
申请号
US19860897378
申请日期
1986.08.18
申请人
AMERICAN TELEPHONE AND TELEGRAPH COMPANY AT&T BELL LABORATORIES
发明人
CAPASSO, FEDERICO;FRENCH, HARRY T.;GOSSARD, ARTHUR C.;HUTCHINSON, ALBERT L.;KIEHL, RICHARD A.;SEN, SUSTANA