In order to produce a semiconductor device of the MIS type having channel doping, the distribution characteristics of the disturbance point density is determined over the depth of the substrate (or of a well) for different quantities, for channel doping of implanted ions. The swing value is calculated from the gate voltage/drain current characteristic on the basis of the distribution characteristic determined. Ions are implanted in the channel with a doping level which is implanted in the substrate in accordance with the disturbance point density in such a manner that the swing value assumes a minimal value or a value which is as low as possible.
