发明名称 Semiconductor arrangement and method for its production
摘要 Semiconductor layers (2, 3) which form a p-n junction (4) are constructed on the surface of an insulating substrate (1), a partial area being exposed. Located on the partial area (1b) of the insulating substrate (1) is a region for the connection of an electrode (5), which is connected to an external connection. The external connection is bonded on the region (1b) provided for the connection in order to prevent mechanical damage to the semiconductor layers (2, 3) which form the p-n junction, the photoelectric efficiency and the reliability of the arrangement at the same time being improved. Furthermore, a robust electrode arrangement can be achieved, since the electrode can be constructed directly on the insulating substrate (1) (Fig. 2). <IMAGE>
申请公布号 DE3900254(A1) 申请公布日期 1989.08.10
申请号 DE19893900254 申请日期 1989.01.05
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 YOSHIDA, SUSUMU, ITAMI, HYOGO, JP
分类号 H01L29/41;H01L31/0216;H01L31/0224;H01L31/05;H01L31/068;H01L31/10 主分类号 H01L29/41
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