Silicon waveguide with monolithically integrated Schottky barrier photodetector
摘要
The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optical signals passing through the waveguide. The Schottky contact is operated in the avalanche or reverse bias mode to generate a useable electrical signal.
申请公布号
US4857973(A)
申请公布日期
1989.08.15
申请号
US19870049352
申请日期
1987.05.14
申请人
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE
发明人
YANG, ANDREW C.;LORENZO, JOSEPH P.;SOREF, RICHARD A.