发明名称 |
Process for making a high density split gate nonvolatile memory cell |
摘要 |
A process is disclosed for producing a high density split gate nonvolatile memory cell which includes a floating gate and a control gate that is formed above the floating gate. The drain region is self-aligned to the floating gate and the source region is self-aligned to the control gate. Fully self-aligned implantation is made possible by the process and structure using self-aligned etch. Programming of the memory cell uses standard EPROM programming, and erasing is accomplished by Fowler-Nordheim tunneling or photoemission. The memory cell can be made with a reduced cell size and read current uniformity is obtained.
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申请公布号 |
US4861730(A) |
申请公布日期 |
1989.08.29 |
申请号 |
US19880147843 |
申请日期 |
1988.01.25 |
申请人 |
CATALYST SEMICONDUCTOR, INC. |
发明人 |
HSIA, STEVE K.;MAHAL, PRITPAL S.;SHIH, WEI-REN |
分类号 |
G11C16/04;H01L21/28;H01L21/336;H01L21/8246;H01L21/8247;H01L27/112;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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