Path isolation in a memory device

摘要

Embodiments of the present disclosure describe techniques and configurations for word-line path isolation in a phase change memory (PCM) device. In one embodiment, a memory device includes a memory cell of a memory device, a bit-line coupled to the memory cell, a word-line coupled to the memory cell, a bit-line electrode coupled to the bit-line, a word-line electrode coupled to the word-line, current-limiting circuitry of a selection module coupled to one of the word-line electrode and the bit-line electrode having a lower potential, the current-limiting circuitry to facilitate a selection operation of the memory cell by the selection module, sensing circuitry coupled to the one of the word-line electrode and the bit-line electrode having the lower potential, the sensing circuitry to perform a read operation of the memory cell, and write circuitry coupled to the one of the word-line electrode and the bit-line electrode having the lower potential, the write circuitry to perform a write operation of the memory cell. Other embodiments may be described and/or claimed.

主权项

1. An apparatus comprising:
a memory cell of a memory device; a bit-line electrode coupled with a single transistor bit-line coupled with the memory cell; a word-line electrode coupled with a single transistor word-line coupled with the memory cell, a capacitance of the word-line electrode is lower than a capacitance of the bit-line electrode, and a potential of the word-line electrode is lower than a potential of the bit-line electrode; and write circuitry coupled with the word-line electrode, the write circuitry to perform a write operation of the memory cell.