| 摘要 |
The semiconductor memory device which is able to decrease the distance between the trenched capacitors comprises a semiconductor layer(22) of a first conductivity type and a semiconductor substrate(21) of a first conductivity type with a higher concentration than the semiconductor layer(22) and trenches(26a,26b) formed at middle point of the semiconductor substrate from the surface of semiconductor layer(22), and impurity diffusion regions(27a,27b) of a second conductivity type formed on the semiconductor layer(22).
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