发明名称 Semiconductor device
摘要 A semiconductor device comprises a semiconductor substrate having a convex portion and at least one conductive interconnection layer formed over the substrate. The interconnection layer has a contact region to be electrically connected. The convex portion of the substrate is formed in correspondence with the contact region, so that a step of the underlying layer for the interconnection layer is removed.
申请公布号 US4884121(A) 申请公布日期 1989.11.28
申请号 US19870049264 申请日期 1987.05.13
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ISHII, TATSUYA
分类号 H01L23/485;H01L29/06;H01L29/41 主分类号 H01L23/485
代理机构 代理人
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