发明名称 |
PROCESS FOR DOPING A SEMICONDUCTOR MATERIAL |
摘要 |
<p>A method for producing a doped semiconductor layer on a semiconductor substrate, employing particle radiation, including the steps of initially applying an adsorbed layer containing a doping substance to the semiconductor substrate; controlling the concentration of the doping substance in the adsorbed layer; growing a semiconductor layer having a crystal lattice structure on the substrate; performing a secondary implantation operation for incorporating the doping substance in the crystal lattice of the semiconductor layer; and performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions.</p> |
申请公布号 |
EP0183962(B1) |
申请公布日期 |
1989.11.29 |
申请号 |
EP19850113440 |
申请日期 |
1985.10.23 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
JORKE, HELMUT;KIBBEL, HORST |
分类号 |
C30B23/02;H01L21/203 |
主分类号 |
C30B23/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|