Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
摘要
Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.
申请公布号
US4912064(A)
申请公布日期
1990.03.27
申请号
US19870113573
申请日期
1987.10.26
申请人
NORTH CAROLINA STATE UNIVERSITY
发明人
KONG, HUA-SHUANG;GLASS, JEFFREY T.;DAVIS, ROBERT F.
