| 摘要 |
Semiconductor device is made by firstly forming a contact hole in an insulating film formed on a first wiring composed of a first Al film (A). The insulating film is then covered with a second Al film (B) for a second wiring. Laser beam pulses are applied, of such an intensity and a pulse width, to the Al film (B), from above, so as to remove any oxide or adsorbed material formed on Al film (A). Finally, the Al film (B) is patterned to form the second wiring. Pref. Al films (A) and (B) are each a film of Al or an Al alloy mainly composed of Al. |
