发明名称 Thin film deposition system
摘要 A thin film deposition system for depositing a thin film on a substrate by sputtering is characterized in that a substrate holder for holding thereon the substrate is transferred by a transfer mechanism from or to a film deposition position to or from another position such as another chamber different from the film deposition chamber, an electrode for applying bias voltage of radio frequency to the substrate or substrate holder is axially movable relatively to the substrate holder so that the electrode can be contacted with or discontact from the substrate holder, and a grounded shield is provided so as to cover the electrode and the substrate holder with a gap thereby shielding radio frequency from the electrode and the substrate holder to prevent formation of glow discharge between a wall of the vacuum chamber and the electrode or the substrate holder.
申请公布号 US4986890(A) 申请公布日期 1991.01.22
申请号 US19900513763 申请日期 1990.04.24
申请人 HITACHI, LTD. 发明人 SETOYAMA, EIJI;KAMEI, MITSUHIRO
分类号 C23C14/34;C23C14/50;C23C14/56;H01J37/34;H01L21/203;H01L21/285;H01L21/31;H01L21/677 主分类号 C23C14/34
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