发明名称 |
Semiconductor device of high breakdown voltage |
摘要 |
The semiconductor device is of high break down voltage type and has a source, drain and a gate deposited therebetween on the semiconductor substrate. The gate oxide film has a thick portion and below that portion, a doped layer as a drain is provided with two layers having different impurity concentration.
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申请公布号 |
US4990982(A) |
申请公布日期 |
1991.02.05 |
申请号 |
US19890428017 |
申请日期 |
1989.10.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OMOTO, KAYOKO;MIYATA, KAZUAKI |
分类号 |
H01L21/336;H01L29/423;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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