发明名称 |
トランジスタの製造方法、トランジスタ、アレイ基板及び表示装置 |
摘要 |
Embodiments of the present invention provide a method for manufacturing a transistor, a transistor, an array substrate and a display device. The method comprises: forming a first source/drain metal layer on a substrate; forming an insulating layer above the first source/drain metal layer; forming a gate metal layer on the insulating layer; forming a gate insulating layer on the gate metal layer; forming a semiconductor layer above the gate insulating layer; forming an etching blocking layer on the semiconductor layer; forming a second source/drain metal layer above the etching blocking layer; forming an insulating layer above the second source/drain metal layer. |
申请公布号 |
JP6055077(B2) |
申请公布日期 |
2016.12.27 |
申请号 |
JP20150502061 |
申请日期 |
2012.11.28 |
申请人 |
京東方科技集團股▲ふん▼有限公司BOE TECHNOLOGY GROUP CO.,LTD. |
发明人 |
姜 春生 |
分类号 |
H01L29/786;H01L21/336;H01L21/8234;H01L27/088;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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