| 摘要 |
The method comprises (a) reacting xSiH4, 2x+3y/2O2, and 2yBCl3 at 420- 430 deg.C in a quartz tube furnace to form boron- doped glass (23) of formula xSiO2.yB3O3, (b) covering the trench- structured substrate (21,22) with the glass (23) in the form of thin film, and (c) heat-treating the covered substrate to give a P- type doped layer (24) of boron.
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