JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING

摘要

JUNCTION FIELD EFF~CT TRANSISTOR AND METHOD OF FABRICATING A junction field effect transistor, specifically a static induction transistor. Prior to metallization a thin layer of germanium is placed over the exposed silicon of the source and gate regions. The germanium is intermixed with the underlying silicGn to form a germanium-silicon composite. A rapid thermal anneal is performed to recrystallize the germanium-silicon composite. Alternatively, a single crystal epitaxial layer may be deposited on the silicon. Conventional metallization procedures are employed to produce ohmic source and gate contact members to the germanium-silicon composite or the epitaxial germanium of the source and qate reglons. By virtue of the reduced bandyap provided by the presence of the germanium, the contact re~istance of the device is reduced.