发明名称 BUFFER FOR BI-CMOS
摘要 The buffer circuit with high speed and driving ability consists of MOS Trs. (M1)(M2) operating mutually and reversely according to interval input signals (INT-CKT), a transistor (Q2) driven by the output of a MOS Tr(M3), and a transistor (M6) driven by the output of MOS Trs. (M1)(M2). The output level is maximised by by connecting the switching input to the gates of MOS Tr (M1)(M2) , and connecting the switching output to the output of bipolar Tr (Q1)(Q2) and the base of MOS Tr.
申请公布号 KR910005793(B1) 申请公布日期 1991.08.03
申请号 KR19880005597 申请日期 1988.05.13
申请人 SAM SUNG ELECTRONICS CO. LTD. 发明人 CHANG DEUK-SOO
分类号 H03K19/08;(IPC1-7):H03K19/08 主分类号 H03K19/08
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