| 发明名称 |
METHOD FOR PROCESSING PHOTORESITS |
| 摘要 |
<p>The side wall profile improvement of photoresist is obtained by controlling the encroaching rate with baking tem,perature. The baking temperature of photoresist (2) deposited on silicon wafer (1) changes with the temperature gradient of T1<T2<T3 from the upper layer to lower layer. The thermal plate is used in baking process.</p> |
| 申请公布号 |
KR910006041(B1) |
申请公布日期 |
1991.08.12 |
| 申请号 |
KR19890007679 |
申请日期 |
1989.06.03 |
| 申请人 |
SAM SUNG ELECTRONICS CO.,LTD. |
发明人 |
KANG HO-YONG |
| 分类号 |
G03F7/20;G03F7/26;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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