| 摘要 |
A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer. |
| 主权项 |
1. A semiconductor apparatus, comprising:
a first element part including a first semiconductor layer; a first wiring part including a first conductor layer, and a first insulator layer located between the first semiconductor layer and the first conductor layer; a second element part including a second semiconductor layer; a second wiring part including a second conductor layer, and a second insulator layer located between the second semiconductor layer and the second conductor layer, the second wiring part being located between the first element part and the second element part and between the first wiring part and the second element part; a third insulator layer located between the first conductor layer and the second conductor layer; and a conductive member penetrating through the first semiconductor layer, the first insulator layer, and the third insulator layer, and connecting the first conductor layer with the second conductor layer, wherein the conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between the first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer, and wherein a diffusion coefficient of the copper to the material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer. |
