Electrically erasable programmable read-only memory with threshold value measurement circuit.

摘要

A NAND cell type electrically erasable programmable read-only memory (10) has NAND cell units (MB1, MB2,..., MBn). Each NAND cell unit has a series array of floating gate type metal-oxide semiconductor field effect transistors (Mi1, Mi2,..., Mi8) as memory cell transistors. The first-stage memory cell transistor (Mi1) is connected at its gate to a corresponding bit line (BLi) via a first select transistor (Qi1). The last-stage memory cell transistor (Mi8) is connected at its source to a common source line (60) by means of a second select transistor (Qi2). The common source line (60) is connected with a test circuit (62) to be used for measuring the distribution of threshold values of the memory cell transistors (M) in the erasing state. The test circuit (62) temporarily applies the common source line (60) with a positive bias voltage (Vbias) of a predetermined potential level so that the potential (Vcgj) of the control gate of a selected memory cell transistor (Mij) is set at 0 volt. As a result, the threshold value of the EEPROM (10) in the erasing state can be measured without using any negative potential. <IMAGE>