OPPOSED FIELD MAGNETORESISTIVE MEMORY SENSING

摘要

A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.