METHOD OF MANUFACTURING NPN TRANSISTOR

摘要

A method of making NPN transistor for removing the crystal defect comprises the steps of ; (a) masking and implanting a phosphorus on bare wafer at 1050 deg.C; (b) annealing the implanted wafer at 950 deg.C; (c) locally oxidising an annealed wafer at 900 deg.C for a fixed time; (d) diffusing the phosphorus impurity to the n+ buried layer by annealing at 1150 deg.C. This method repress the generation of soft wave in breakdown voltage of collector-base.