| 发明名称 |
REST PARTICLE REMOVE METHOD USING ANISOTROPHIC ETHCHING |
| 摘要 |
The residual material of thin film remaining at to pology region in photo lithography processing of multi-layer structure is removed by anisotropic etching with plasma gas. The gas dispersion is generated at end point of etching part by changing the plasma condition. The condition of plasma gas is 280m Torr pressure and 250 watt. The composition of gases is 100 : 150 (SCCM) of CCl4 : He.
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| 申请公布号 |
KR910008983(B1) |
申请公布日期 |
1991.10.26 |
| 申请号 |
KR19880017007 |
申请日期 |
1988.12.20 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO. LTD. |
发明人 |
KIM SANG-ICK;PARK JIN-GU;KIM SE-JUNG;PARK KYE-SOON;PARK HYA-SUNG |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
| 代理机构 |
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