发明名称 Plasma apparatus, and method and system for extracting electrical signal of member to which high-frequency-wave is applied.
摘要 <p>A system for measuring a temperature of a high-frequency electrode (20) of a plasma etching apparatus has a temperature detecting element (62) for detecting a temperature, a metal sheath member (63) in which the temperature detecting element (62) is provided to be insulated from it and which is kept in a DC floating state, an insulating member (25) for insulating the sheath member (63) from the high-frequency electrode (20), and a filter (65) for removing a high-frequency component of an electrical signal sent from the temperature detecting element (62). &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP0467391(A2) 申请公布日期 1992.01.22
申请号 EP19910112122 申请日期 1991.07.19
申请人 TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA 发明人 NOZAWA, TOSHIHISA;KAMIKANDA, OSAMU;YOSHIDA, YUKIMASA;OKANO, HARUO
分类号 H01J37/32;H01L21/302;H01L21/3065;H01L21/66;C23F4/00;G01K7/00;G01K7/26 主分类号 H01J37/32
代理机构 代理人
主权项
地址