发明名称 |
Plasma apparatus, and method and system for extracting electrical signal of member to which high-frequency-wave is applied. |
摘要 |
<p>A system for measuring a temperature of a high-frequency electrode (20) of a plasma etching apparatus has a temperature detecting element (62) for detecting a temperature, a metal sheath member (63) in which the temperature detecting element (62) is provided to be insulated from it and which is kept in a DC floating state, an insulating member (25) for insulating the sheath member (63) from the high-frequency electrode (20), and a filter (65) for removing a high-frequency component of an electrical signal sent from the temperature detecting element (62). <IMAGE> <IMAGE></p> |
申请公布号 |
EP0467391(A2) |
申请公布日期 |
1992.01.22 |
申请号 |
EP19910112122 |
申请日期 |
1991.07.19 |
申请人 |
TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA |
发明人 |
NOZAWA, TOSHIHISA;KAMIKANDA, OSAMU;YOSHIDA, YUKIMASA;OKANO, HARUO |
分类号 |
H01J37/32;H01L21/302;H01L21/3065;H01L21/66;C23F4/00;G01K7/00;G01K7/26 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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