发明名称 Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist
摘要 A process for promoting photoresist adhesion on a semiconductor wafer having a previously applied photoresist layer. The process is adapted for semiconductor manufacture in which a first photoresist layer has been applied to the wafer and in which a second photoresist layer must be adhered to the first photoresist layer and to the substrate of the wafer. The process includes a steps of: baking the first photoresist layer, applying a liquid mixture including solvents to soften the first photoresist layer and an adhesion promotor for the substrate, spin drying the wafer, and applying a second photoresist layer. In an illustrative embodiment of the invention, the liquid mixture includes acetone, n-butyl acetate (NBA), and hexamethyldisilazane (HMDS) combined in a ratio of 1:1:1.
申请公布号 US5091290(A) 申请公布日期 1992.02.25
申请号 US19900620752 申请日期 1990.12.03
申请人 MICRON TECHNOLOGY, INC. 发明人 ROLFSON, J. BRETT
分类号 G03F7/00;G03F7/11;G03F7/16 主分类号 G03F7/00
代理机构 代理人
主权项
地址