| 摘要 |
A single crystalline silicon carbide ( beta -SiC) layer having a thickness greater than 1 mu m is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800 to 1000 DEG C, preferably in a range from 810 to 850 DEG C, whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 ANGSTROM is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850 to 950 DEG C. In this process, a single crystalline beta -SiC layer can be grown on the buffer layer, and a thickness of a few mu m for the grown beta -SiC layer can be expected. |
