Article and method for implementing electronic devices on a substrate using quantum dot layers

摘要

Novel use of a cladded quantum dot array layer serving as a waveguide channel by sandwiching it between two cladding layers comprised of lower index of refraction materials is described to form Si nanophotonic devices and integrated circuits. The photonic device structure is compatible with Si nanoelectronics using conventional, quantum dot gate (QDG), and quantum dot channel (QDC) FET based logic, memories, and other integrated circuits.

主权项

1. A photonic waveguide having three layers,
a top layer having a top layer index of refraction (TIOR); a bottom layer having a bottom layer index of refraction (BIOR); and a middle layer, wherein the middle layer is located between the top layer and the bottom layer, wherein at least one of the top layer, bottom layer and middle layer is configured such that when an Electromagnetic Energy (EME) having an EME wavelength is introduced into the middle layer, the EME is waveguided in the transverse direction, and wherein the middle layer includes at least one middle layer index of refraction (MIOR), wherein the at least one MIOR is greater than the TIOR and the BIOR, and wherein the top layer, bottom layer and middle layer are deposited on a substrate which is constructed from at least one of Si, Ge, Si-on-Insulator, Si-on-sapphire, GaAs, InP, ZnSe, and LiNbO3, and wherein the middle layer is constructed of an array of cladded quantum dots, wherein the cladded quantum dots include a dot core having a diameter of about 3 nm to about 5 nm and a dot cladding having a cladding thickness in the range of about 1 nm to about 3 nm,
wherein the dot core is constructed from a material having a dot core energy gap and a dot core index of refraction, andwherein the dot cladding is constructed from a material having a dot cladding energy gap and a dot cladding index of refraction,wherein the dot core energy gap is smaller than the dot cladding energy gap and wherein the dot core index of refraction is larger than the dot cladding index of refraction, and, wherein the array of cladded quantum dots includes an effective index of refraction (EIOR) and an effective absorption coefficient, wherein the EIOR and the effective absorption coefficient is responsive to the EME wavelength, and wherein the MIOR includes properties that are responsive to at least one of an electric field and an electromagnetic field, and wherein the dot core is constructed from a material selected from at least one of Si, Ge, combination of Si and Ge, II-VI and III-V semiconductors, and any combination thereof, and wherein the dot cladding is constructed from a material selected from at least one of SiOx, GeOx, II-VI and III-V materials, and any combination thereof, and wherein the top layer is deposited on one side of the middle layer and is constructed from a material selected from at least one of SiO2, Si3N4, SiON, and at least one material having an index of refraction lower than the EIOR and an energy gap higher than the dot core energy gap, and wherein the bottom layer is deposited on the other side of the middle layer and is constructed from a material selected from at least one of SiO2, Si3N4, SiON, and at least one material having an index of refraction lower than the EIOR and an energy gap higher than the dot core energy gap, and an electrode material layer deposited on the top layer and the bottom layer, and wherein the EME is confined in the lateral direction within the middle layer by at least one of,
a photonic crystal structure having at least one of a two-dimensional and three-dimensional photonic crystal lattice,a ridge waveguide, anda rib waveguide said waveguiding structure comprising of middle waveguide layer, top and bottom cladding layer realized in conjunction with either lower index refraction cladding regions or photonic crystal structure along the lateral sides adjoining the waveguiding structure.