| 摘要 |
<p>A method for manufacturing memory cells of a DRAM, which are manufactured easily with a high yield, and have high breakdown voltages and large capacitances. In the method, after forming a metallic thin film comprising at least one layer on a substrate, the surface of the metallic thin film is directly oxidized, and the thin film of a metallic oxide is formed on the surface of the metallic thin film.</p> |
