| 摘要 |
<p>A memory cell of a DRAM which can be easily manufactured, and has a high breakdown voltage, and a large capacitance. The semiconductor memory of a dynamic type has capacitors for accumulating signal charges, each capacitor comprising two electrodes having nearly equal areas and facing each other with a first insulator interposed between, and a second insulator adjoining to the electrodes. The dielectric constant of the first insulator is larger than that of the second insulator.</p> |
