发明名称 Non-volatile dynamic random access memory array and the method of fabricating thereof
摘要 The present invention relates to a non-volatile dynamic random acess memory cell having a dynamic random access memory cell and an electrically-erasable and electrically-programmable memory device connected on the opposite sides of an insolation device. It also relates to a memory array of the non-volatile dynamic random access memory cells and the method of fabricating the same.
申请公布号 US5140551(A) 申请公布日期 1992.08.18
申请号 US19900497391 申请日期 1990.03.22
申请人 CHIU, TE-LONG 发明人 CHIU, TE-LONG
分类号 G11C14/00;H01L27/105 主分类号 G11C14/00
代理机构 代理人
主权项
地址