发明名称 |
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION FOR REPAIRING BROKEN LINES IN MICROELECTRONIC PACKAGES |
摘要 |
A thermally activated method of depositing a metal on a localized microscopic portion of a substrate, that can be carried out at relatively low process temperatures, and that is particularly useful for depositing metals in an amount and purity sufficient for electrical conductivity on substrates containing microelectronic circuits and devices or their respective precursors. The method comprises heating a substrate in the presence of a vaporized metal-organic composition to a first temperature that is just below the temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion, and then raising the temperature of a localized portion of the heated substrate from the first temperature to a second, higher temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion but below the temperature at which the organic-containing portion will decompose to produce and deposit organic decomposition products upon the localized portion, and until an amount of the dissociated metal sufficient for electrical conductivity deposits upon the localized portion.
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申请公布号 |
US5145714(A) |
申请公布日期 |
1992.09.08 |
申请号 |
US19900605688 |
申请日期 |
1990.10.30 |
申请人 |
MCNC;NORTHERN TELECOM LIMITED |
发明人 |
REISMAN, ARNOLD;TEMPLE, DOROTA;TURLIK, IWONA |
分类号 |
H01L21/3205;H01L21/768;H05K3/22 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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