发明名称 |
Voltage-controlled magnetic device operating over a wide temperature range |
摘要 |
A voltage-controlled spintronic device includes a magnetic layer having an effective anisotropy Keff; a non-magnetic insulating layer; a contact layer; the magnetic layer having an anisotropy switching threshold such that application of a polarization voltage Vmax allows switching of the effective anisotropy Keff from a direction perpendicular to the reference plane to a direction in the reference plane or vice versa, the magnetic layer including a first layer, with thickness tB, having a volume anisotropy KVB; a second layer, with thickness tA, having a surface anisotropy KSA and a volume anisotropy KVA; the surface anisotropy KSA and the volume anisotropies KVA and KVB respecting, over a given operating temperature range: Min(KSA(V=0), KSA(V=Vmax))<−{KVBtB+KVAtA)<Max(KSA(V=0), KSA(V=Vmax)). KSA(V=0) is the surface anisotropy when no polarization voltage is applied. KSA(V=Vmax) is the surface anisotropy when a polarization voltage Vmax is applied. |
申请公布号 |
US9508920(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201414906770 |
申请日期 |
2014.07.18 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);UNIVERSITÉ JOSEPH FOURIER |
发明人 |
Dieny Bernard;Bea Hélène;Bandiera Sébastien |
分类号 |
G11C11/15;H01L43/02;G11C11/16;G01R33/09;G01R33/12;H01F10/32;H01L43/08;H01L43/10 |
主分类号 |
G11C11/15 |
代理机构 |
Pillsbury Winthrop Shaw Pittman LLP |
代理人 |
Pillsbury Winthrop Shaw Pittman LLP |
主权项 |
1. A voltage-controlled magnetic device comprising:
a magnetic layer extending along a reference plane and having a variable direction magnetisation and an effective anisotropy Keff; a non-magnetic insulating layer extending onto the magnetic layer; a contact layer extending onto the non-magnetic insulating layer; a polarisation voltage device configured to apply a polarisation voltage between the contact layer and the magnetic layer, through the non-magnetic insulating layer; said magnetic layer having an anisotropy switching threshold such that the application of a polarisation voltage Vmax through the non-magnetic insulating layer enables switching of the effective anisotropy Kerr from a direction perpendicular to the reference plane to a direction in the reference plane or vice versa, wherein the magnetic layer comprises: a first layer with thickness tB, having a first volume anisotropy KVB; a second layer with thickness tA, having a surface anisotropy KSA and a second volume anisotropy KVA, the second layer being situated between the first layer and the non-magnetic insulating layer; a composition and a thickness of the second and first layers being chosen in order that the surface anisotropy KSA and the first and second volume anisotropies KVB and KVA respect, over a given operating temperature range, the following inequality:
Min=(KSA(V=0),KSA(V=Vmax))<−KVBtB+KVAtA)<Max(KSA(V=0),KSA(V=Vmax)) where KSA (V=0) is the surface anisotropy when no polarisation voltage is applied; KSA (V=Vmax) is the surface anisotropy when the polarisation voltage Vmax is applied. |
地址 |
Paris FR |