发明名称 Solar cell metallisation and interconnection method
摘要 A solar cell and a method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity. The method comprises: forming a plurality of contact points on a surface of the solar cell, whereby the contact points provide an electrical connection to the first semiconductor region; and locating a plurality of conducting wires over the solar cell to make electrical connection to the contact points. The contact points are either an exposed silicon surface or a silicon surface over which metal pads are formed. The metal pads may comprise a plated layer of a low-melting temperature metal and/or may have a thickness of less than 5 microns.
申请公布号 US9508884(B2) 申请公布日期 2016.11.29
申请号 US201414764128 申请日期 2014.01.30
申请人 NEWSOUTH INNOVATIONS PTY LIMITED 发明人 Wenham Stuart Ross;Edwards Matthew Bruce;Lennon Alison Joan;Hsiao Pei Chieh;Tjahjono Budi Santoso
分类号 H01L31/00;H01L31/05;H01L31/0224;H01L31/068;H01L31/18;C25D3/60;C25D5/10;C25D5/50;C25D5/56;C25D7/12;H01L31/02;H01L31/0203;C25D5/00 主分类号 H01L31/00
代理机构 代理人
主权项 1. A method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity, the first semiconductor region having a textured surface, the method comprising: forming a textured dielectric surface having a plurality of peaks by coating the textured surface with a dielectric layer; forming openings in the dielectric layer to expose areas of the first semiconductor region; forming a plurality of discrete heavily doped regions of the first dopant polarity at the openings extending from the surface of the solar cell into the first semiconductor region; forming a plurality of discrete first contact points on a surface of the solar cell, the contact points comprising first metal pads having a thickness of less than 5 microns over the discrete heavily doped regions to provide an electrical connection to the first semiconductor region, a top surface of the first metal pads being lower than a highest peak of the plurality of peaks of the textured dielectric surface; and locating a plurality of first conducting wires over the solar cell whereby each of the conducting wires makes contact with and electrically connects to at least one of the first metal pads.
地址 Sydney, NSW AU