发明名称 Conductive layer routing
摘要 Methods of fabricating middle of line (MOL) layers and devices including MOL layers. A method in accordance with an aspect of the present disclosure includes depositing a hard mask across active contacts to terminals of semiconductor devices of a semiconductor substrate. Such a method also includes patterning the hard mask to selectively expose some of the active contacts and selectively insulate some of the active contacts. The method also includes depositing a conductive material on the patterned hard mask and the exposed active contacts to couple the exposed active contacts to each other over an active area of the semiconductor devices.
申请公布号 US9508589(B2) 申请公布日期 2016.11.29
申请号 US201414283162 申请日期 2014.05.20
申请人 QUALCOMM INCORPORATED 发明人 Song Stanley Seungchul;Rim Kern;Wang Zhongze;Xu Jeffrey Junhao;Chen Xiangdong;Yeap Choh Fei
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
代理机构 Seyfarth Shaw LLP 代理人 Seyfarth Shaw LLP
主权项 1. A device including middle-of-line (MOL) layers, the MOL layers comprising: an isolation layer comprising a plurality of active contacts of a first type and a plurality of active contacts of a second type; a patterned hard mask layer arranged on the isolation layer to selectively expose the plurality of active contacts of the first type to terminals of semiconductor devices of a semiconductor substrate, wherein the patterned hard mask layer selectively insulates the plurality of active contacts of the second type; and a conductive material directly contacting the patterned hard mask layer and directly contacting the exposed plurality of active contacts of the first type, the conductive material arranged to couple the exposed plurality of active contacts of the first type to each other over an active area of the semiconductor devices.
地址 San Diego CA US