| 摘要 |
The field effect transistor is mfd. by (a) forming a field oxide film (2), a gate insulating film (3), a gate polysilicon film (4) and a gate laminating film (5) on the P-type substrate (1), (b) etching a part of the film (4) by the isotropic dry etching method, patterning the gate, and then implanting an N- ion to form a low density shallow junction, (c) forming an oxide film (6) on the side wall and the outer wall of the film (4) by thermal- treating it under the oxidizing atmosphere, (d) implanting an N+ ion to form a deep junction, and then heat-treating it to form a source/drain, and (e) depositing an insulating film (7), and then opening the contact window to form a metal electrode (8).
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