| 摘要 |
A semiconductor light emitting device comprises a first groove extending to a first semiconductor layer from a second semiconductor layer side through the second semiconductor layer and a light emitting layer; a first ohmic electrode formed in contact with the first semiconductor layer in the first groove; an insulating layer covering a surface of the second semiconductor layer and at least the surface of part of the light emitting layer exposed in the first groove; a metal layer covering the surface of the insulating layer and connected to the first ohmic electrode; a second groove extending from a first semiconductor layer side through the first semiconductor layer and the light emitting layer to the second semiconductor layer; a second ohmic electrode formed in contact with the second semiconductor layer in the second groove; and a support body bonded to the metal layer via a junction layer. |
