| 摘要 |
The dielectric substance for a capacitor of semiconductor device is prepared by substitution Sr and Ba with La by adding more than 2 mole% La2O3 to (Sr,Ba)Nb2O6 so that the dielectric substance has a composition of formula (SrxBa1-x)1-3y/2LayNb2O6, where 0.25 <= x <= 0.5 and 0.04 <= y. The semiconductor equipped with a thin film capacitor using the above dielectric substance improves the degree of integration of semiconductor element by increasing the dielectric constant. And the characteristics of thin film do not deteriorate in the manufacturing process.
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