| 摘要 |
<p>A thin film pyroelectric imaging array (N, M) fabricated as a Si wafer. A thin film (40) of PbTiO3 is deposited on a thermally isolated bridge (45). The bridge (45) suspends the PbTiO3 sensor (40) over a preferentially etched cavity (70) in the Si wafer (10). Improved thermal isolation increases the responsivity of the sensor (33) to incident radiation. The pyroelectric sensor (33) formed can operate effectively at room temperature.</p> |
