DYE-DOPED HOLE TRANSPORT LAYER FOR ORGANIC LIGHT EMITTING DIODES

摘要

Embodiments of the invention are directed to an OLED where the quenching from a low triplet energy in the hole transport layer (HTL) at a phosphorescent dye dye-doped HTL/emission layer (EML) interface can be avoided when the triplet energy of the host material of the HTL is high, above -2.6 eV, and the hole transport phosphorescent dye is within a hole transport electron blocking material with the high triplet energy and the EML comprises the hole transport phosphorescent dye. The dye can be in the HTL at levels of 3% of greater.