发明名称 |
INPUT-OUTPUT CELL OF CMOS IC |
摘要 |
The output drive capability of the I/O cell is increased by depositing the I/O cells appropriately. The I/O cell (4) is arrayed in a vertial direction to internal cell (1), and transistors of the I/O cells are arrayed in a vertical directions to wells which are positioned above and below the bonding pad. Power lines to apply drive voltage to the transistors are divided for each tansistor to increase output drive capability.
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申请公布号 |
KR930004297(B1) |
申请公布日期 |
1993.05.22 |
申请号 |
KR19900015564 |
申请日期 |
1990.09.28 |
申请人 |
HYUNDAI ELECTRONICS CO., LTD. |
发明人 |
JU, YU - JIN;KIM, MIN - HWAN |
分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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