发明名称 Semiconductor integrated circuit device and method of fabricating same
摘要 In a chip carrier wherein a semiconductor chip is face down bonded to a package substrate through solder bumps, then covered with a cap and sealed hermetically using a sealing solder, the back of the semiconductor chip being bonded closely to the underside of the cap using a solder for heat transfer, a solder preform serving as the said heat transfer solder is heat-melted and a portion of the thus melted solder is allowed to flow into the sealing portion to effect the hermetic seal of the chip. Furthermore, in order to improve the flowability of the solder preform during the melt flow thereof, a metallized layer for heat transfer formed under the heat transfer solder of the cap and a sealing metallized layer are partially connected with each other through a connecting metallized layer.
申请公布号 US5219794(A) 申请公布日期 1993.06.15
申请号 US19920850738 申请日期 1992.03.13
申请人 HITACHI, LTD.;HITACHI HOKKAI SEMICONDUCTOR, LTD. 发明人 SATOH, TOSHIHIKO;HAYASHIDA, TETSUYA;KIKUCHI, HIROSHI;YAMADA, TAKEO;MORI, TAKASHI
分类号 H01L21/50;H01L21/58;H01L23/10 主分类号 H01L21/50
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