| 摘要 |
Processes are disclosed for making amorphous silicon nitride, silicon carbide and aluminum nitride. One of the processes involves reaction with ammonia or amine compounds with silicon or aluminum compounds containing sulfur at temperatures below 500 DEG C. Another process involves reacting silicon or aluminum metals with hydrogen sulfide in the presence of catalysts to form silicon monosulfide or aluminum sulfide at temperatures below 500 DEG C. Other methods of making ceramic materials are disclosed, all performed at temperatures below 500 DEG C.
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